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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = –14 A
(Note 2)
–0.8
–1.2
V
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = –14 A,
diF/dt = 100 A/μs
28
15
ns
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) R θ JA = 40°C/W when mounted on a
1in 2 pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
P D
b) R θ JA = 96°C/W when mounted
on a minimum pad.
3. Maximum current is calculated as:
R DS(ON)
where P D is maximum power dissipation at T C = 25°C and R DS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDD6637 Rev. C2(W)
www.fairchildsemi.com
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